The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Dec. 31, 1991
Ji-hong Ahn, Seoul, KR;
Samsung Electronics Co., Ltd., Kyunggi, KR;
Abstract
A semiconductor memory device and the method therefor is disclosed, in which memory cells having a transistor that has a source, a drain and a gate electrode, and a capacitor that has a storage electrode electrically connected to the source of the transistor, a dielectric layer and a plate electrode are formed on a semiconductor substrate in an orderly shape. In the memory cell, a covering layer is formed over the entire semiconductor region, except for an area defined to form the storage electrode, so as to be both insulated from the lower structure and the storage electrode. Accordingly, not only is prevented the phenomenon that data stored in a cell capacitor is destroyed by the residue of a polycrystal silicon layer, but also the surface thereof can be flattened in advance, limited only by the thickness of the polycrystal silicon layer.