The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Dec. 30, 1991
Applicant:
Inventor:
Ji-hong Ahn, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyunggi, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
361313 ; 357 236 ; 437 52 ;
Abstract
In a highly integrated semiconductor memory device provided with memory cells in matrix form on a semiconductor substrate, each memory cell includes a transistor and a capacitor. The cell capacitor includes a storage electrode in contact with a source region of the transistor. This storage electrode has a plurality of irregularly shaped quasi-cylindrical holes formed therein at random locations. A dielectric film is coated on the whole surface of the storage electrode. Thus, storage electrodes having a large cell capacitance suitable for DRAM cells of highly integrated circuits can be achieved.