The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Jun. 14, 1991
Ji-hong Ahn, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A high-density semiconductor memory device and its manufacturing method are disclosed. The device has a plurality of memory cells, each consisting of one transistor and one capacitor on a substrate in a matrix form. The capacitor, in contact with the source region of the transistor, consists of a storage electrode having a hollow cylindrical electrode with a wall of predetermined thickness, and a column electrode surrounded by the cylindrical electrode. The capacitor further comprises a plurality of bars, a base plate electrode connecting the cylindrical and column electrodes to each other, a dielectric layer coating the whole surface of the storage electrode, and a plate electrode formed on top of the dielectric layer. According to this invention, a greater capacitance may be obtained while avoiding current leakage and the disparity of cell capacitance problems involved with a conventional stack-type capacitor having a ringed structure.