The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1992
Filed:
Jun. 14, 1991
Ji-hong Ahn, Seoul, KR;
Samsung Electronics Corp., Ltd., Suwon, KR;
Abstract
A method for manufacturing a villus-type capacitor of a semiconductor memory device formed by stacking a storage electrode, a dielectric film and a plate electrode on a semiconductor substrate further comprising the steps of forming a first conductive layer by depositing a conductive material on the semiconductor substrate; covering the first conductive layer with a second material having grains of a first material; selectively removing the second material using the grains of the first material as a mask; etching a predetermined portion of the first conductive layer using a grain pattern formed by removing the second material as a mask; removing the grain pattern; completing the formation of a storage electrode by defining into each unit cell the villus-formed first conductive layers on the surface of the device utillizing an etching process; forming the dielectric film over the surface of the storage electrode; and forming the plate electrode by depositing a second conductive layer over the dielectric film. The pillar-shaped storage electrode having dimensions below design rules and a buried bit line extend the capacitor's surface, resulting in an effective increase of capacitive area, and a corresponding increase in the cell capacitance.