The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1994
Filed:
Dec. 18, 1992
Ji-hong Ahn, Seoul, KR;
Young-woo Seo, Kyungsangbak-do, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A method for manufacturing a capacitor of a highly integrated semiconductor memory device includes the steps of forming a conductive layer on the whole surface of a semiconductor substrate, forming a first material layer on the whole surface of the conductive layer, forming a polysilicon layer having hemispherical grains on the whole surface of the first material layer, forming a first material layer pattern by performing an etching on the first material layer, using the polysilicon layer as an etch-mask, partially removing the conductive layer by anisotropically etching the conductive layer, using the first material layer pattern as an etch-mask, defining the conductive layer into an individual unit cell, and removing the first material layer pattern. Since greater cell capacitance can be secured by a simple process, this method can be adopted to manufacturing semiconductor memory devices having packing densities up to 64 Mb and 256 Mb.