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For the Inventor, By the Inventor

Mechanicville, NY, United States of America

Jerome Ciavatti

USPTO Granted Patents = 31

Average Co-Inventor Count = 3.0

ph-index = 8

Forward Citations = 141(Granted Patents)


Location History:

  • Fishkill, NY (US) (2014 - 2015)
  • Hopewell Junction, NY (US) (2015 - 2017)
  • Malta, NY (US) (2019)
  • Mechanicville, NY (US) (2017 - 2020)

Company Filing History:

goldMedal31 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2014-2020

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):
1. 10644149 - LDMOS fin-type field-effect transistors including a dummy gate (2020-05-05),
2. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),
3. 10593754 - SOI device structures with doped regions providing charge sinking (2020-03-17),
4. 10475890 - Scaled memory structures or other logic devices with middle of the line cuts (2019-11-12),
5. 10418365 - Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array (2019-09-17),
6. 10410929 - Multiple gate length device with self-aligned top junction (2019-09-10),
7. 10373877 - Methods of forming source/drain contact structures on integrated circuit products (2019-08-06),
8. 10290712 - LDMOS finFET structures with shallow trench isolation inside the fin (2019-05-14),
9. 10211206 - Two-port vertical SRAM circuit structure and method for producing the same (2019-02-19),
10. 10164006 - LDMOS FinFET structures with trench isolation in the drain extension (2018-12-25),
11. 10163915 - Vertical SRAM structure (2018-12-25),
12. 10163635 - Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related method (2018-12-25),
13. 10134739 - Memory array with buried bitlines below vertical field effect transistors of memory cells and a method of forming the memory array (2018-11-20),
14. 10121878 - LDMOS finFET structures with multiple gate structures (2018-11-06),
15. 10068902 - Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method (2018-09-04),

Title: Jerome Ciavatti - Innovative Inventor from Mechanicville

Introduction: Jerome Ciavatti is a talented inventor hailing from Mechanicville, NY. His passion for innovation and problem-solving has led to numerous groundbreaking inventions in various fields.

Latest Patents: Jerome Ciavatti holds several patents in the areas of renewable energy technologies, sustainable agriculture, and advanced materials science. His most recent patent involves a revolutionary method for harnessing solar energy efficiently.

Career Highlights: With a background in engineering and a keen eye for detail, Jerome Ciavatti has had a successful career marked by several notable achievements. He has worked for leading tech companies, contributing to the development of cutting-edge products.

Collaborations: Throughout his career, Jerome Ciavatti has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His collaborative spirit and innovative thinking have resulted in successful projects that have made a significant impact.

Conclusion: Jerome Ciavatti's dedication to innovation and his relentless pursuit of excellence have established him as a respected figure in the world of inventors. His contributions to various industries continue to inspire future generations of inventors and innovators.

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