The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 30, 2017
Globalfoundries Inc., Grand Cayman, KY;
Yi Qi, Niskayuna, NY (US);
Hui Zang, Guilderland, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Jerome Ciavatti, Mechanicville, NY (US);
Judson Robert Holt, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method for preventing epitaxial merge between adjacent devices of a semiconductor is provided. Embodiments include forming a protection layer over a spacer formed over a first and second plurality of fins deposited within a substrate; pinching off a portion of the protection layer formed within a space between each of the plurality of fins; forming a planarization layer over the protection layer and the spacer; and etching a portion of the spacer to form inner sidewalls between each of the plurality of fins, outer sidewalls of a height greater than the height of the inner sidewalls for preventing the growth of the epitaxial layer beyond the outer sidewalls, or a combination thereof.