The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Oct. 26, 2018
Globalfoundries Inc., Grand Cayman, KY;
Jagar Singh, Clifton Park, NY (US);
Jerome Ciavatti, Mechanicville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a laterally-diffused metal-oxide-semiconductor device. A fin projects from a substrate, a channel region and a drain extension are arranged in a first section of the fin and the substrate beneath the first section of the fin, a source region is arranged in the first section of the fin, a drain region is arranged in a second section of the fin and the substrate beneath the second section of the fin, and a gate structure is arranged over the channel region. The drain region and the source region have an opposite conductivity type from the channel region. A trench isolation region is arranged in the fin between the first section of the fin and the second section of the fin. A dummy gate is arranged over a portion of the second section of the fin.