The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Sep. 21, 2017
Globalfoundries Inc., Grand Cayman, KY;
Jerome Ciavatti, Mechanicville, NY (US);
Jagar Singh, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Field-effect transistor structures for a laterally-diffused metal-oxide-semiconductor (LDMOS) device and methods of forming a LDMOS device. First and second fins are formed on a substrate. A first well of a first conductivity type is arranged partially in the substrate and partially in the first fin. A second well of a second conductivity type is arranged partially in the substrate, partially in the first fin, and partially in the second fin. First and second source/drain regions of the second conductivity type are respectively formed within the first well in the first fin and within the second well in the second fin. Spaced-apart gate structures are formed that overlap with respective portions of the first fin. A doped region of the first conductivity type is arranged within the second well in the first fin between the first and second gate structures.