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For the Inventor, By the Inventor

Austin, TX, United States of America

Jeremy Isaac Martin

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Advanced Micro Devices Corporation, Globalfoundries Inc., Advance Micro Devices, Inc.. Active years: 2001-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeremy Isaac Martin. Retrieved from https://idiyas.com/inventor/jeremy-isaac-martin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17

% Patents Active = 64.7

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 164(Granted Patents)


Location History:

  • Annandale On Hudson, NY (US) (2005 - 2008)
  • Austin, TX (US) (2001 - 2010)
  • North Potomac, MD (US) (2012)

Company Filing History:

goldMedal14 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
silverMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 24 
 
Advance Micro Devices, Inc.
 patents

Years Active: 2001-2012

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Areas of Expertise:
Electromigration
Dielectric Layers
Copper Damascene
Plasma Control
CVD Films
Adhesion Improvement
Ion Implantation
Sidewall Treatment
Film Repair
Wafers
Silicon Concentration
Microscratching
17 patents (USPTO):Explore Patents
1. 8253423 - Multiple line width electromigration test structure and method (2012-08-28),
2. 7737021 - Resist trim process to define small openings in dielectric layers (2010-06-15),
3. 7381660 - Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness (2008-06-03),
4. 7369905 - Method and apparatus for pressure and plasma control during transitions used to create graded interfaces by multi-step PECVD deposition (2008-05-06),
5. 6989601 - Copper damascene with low-k capping layer and improved electromigration reliability (2006-01-24),
6. 6927113 - Semiconductor component and method of manufacture (2005-08-09),
7. 6797652 - Copper damascene with low-k capping layer and improved electromigration reliability (2004-09-28),
8. 6642619 - System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalum (2003-11-04),
9. 6610594 - Locally increasing sidewall density by ion implantation (2003-08-26),
10. 6600333 - Method and test structure for characterizing sidewall damage in a semiconductor device (2003-07-29),
11. 6514844 - Sidewall treatment for low dielectric constant (low K) materials by ion implantation (2003-02-04),
12. 6500755 - Resist trim process to define small openings in dielectric layers (2002-12-31),
13. 6498112 - Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films (2002-12-24),
14. 6436808 - NH3/N2-plasma treatment to prevent organic ILD degradation (2002-08-20),
15. 6420193 - Repair of film having an SI-O backbone (2002-07-16),

Title: Jeremy Isaac Martin: Innovator in Semiconductor Technology

Introduction

Jeremy Isaac Martin is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Martin has made remarkable advancements in the field, particularly in electromigration testing and semiconductor device manufacturing.

Latest Patents

Among his latest patents is the "Multiple line width electromigration test structure and method." This invention discloses apparatus and methods for examining the electromigration lifespan of conductors. The method involves forming a test structure on a semiconductor substrate, which includes a first conductor structure with a smaller cross-sectional area and a second conductor structure with a larger cross-sectional area. By flowing current through these structures at sufficient densities, Martin's method allows for monitoring current drops that indicate electromigration failure, thus recording the time until failure occurs.

Another notable patent is the "Resist trim process to define small openings in dielectric layers." This invention outlines a method for forming semiconductor devices by defining a photoresist feature and subsequently reducing its size to create openings in dielectric material. This innovative approach enhances the manufacturing process of semiconductor devices, showcasing Martin's expertise in the field.

Career Highlights

Jeremy Martin has worked with leading companies in the semiconductor industry, including Advanced Micro Devices Corporation and GlobalFoundries Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of semiconductor technology.

Collaborations

Throughout his career, Martin has collaborated with notable professionals in the industry, including Paul Raymond Besser and Eric M Apelgren. These collaborations have further enriched his work and have led to the development of groundbreaking technologies.

Conclusion

Jeremy Isaac Martin stands out as a key figure in semiconductor innovation, with a strong portfolio of patents that reflect his expertise and dedication to advancing technology. His contributions continue to shape the future of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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