The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Dec. 07, 2000
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/131 ; H01L 2/1464 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/131 ; H01L 2/1464 ;
Abstract
Degradation of organic low-k interlayer dielectrics during fabrication is substantially prevented or significantly reduced by treatment with a plasma containing a source of hydrogen and N . Embodiments include treating a SiCOH, such as Black Diamond®, ILD with a NH /N plasma after deposition, after forming a damascene opening therein and/or after CMP but prior to capping layer deposition.