The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2003
Filed:
Apr. 23, 2001
Applicant:
Inventors:
Jeremy I. Martin, Austin, TX (US);
Eric M. Apelgren, Austin, TX (US);
Christian Zistl, Austin, TX (US);
Paul R. Besser, Austin, TX (US);
Srikantewara Dakshina-Murthy, Austin, TX (US);
Jonathan B. Smith, Fremont, CA (US);
Nick Kepler, Saragota, CA (US);
Fred Cheung, Newark, CA (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ; H01L 2/1461 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/14763 ; H01L 2/1461 ; H01L 2/1469 ;
Abstract
A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises densifying a portion of the first dielectric layer above at least a portion of the first conductive structure, and forming a first opening in the densified portion of the first dielectric layer.