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Saratoga, CA, United States of America

Nick Kepler

This inventor holds 31 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 1998-2003.

USPTO Granted Patents = 31

% Patents Active = 96.8

Average Co-Inventor Count = 3.2

ph-index = 11

Forward Citations = 344(Granted Patents)

Location History:

San Jose, CA (US) (1998)
Saratoga, CA (US) (1999 - 2003)
Saragota, CA (US) (2003)

Company Filing History:

31 out of 13,146

Advanced Micro Devices Corporation

Years Active: 1998-2003

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Areas of Expertise:

Shallow Trench Isolation

Ion Implantation

Silicidation

Junction Formation

Metal Silicide

Dopant Out-Diffusion

Dielectric Materials

Stepper Alignment Mark

Ultra-Shallow Junctions

Silicon Buffer Layer

Contact Resistance

Gate Oxide Quality

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6599810 - Shallow trench isolation formation with ion implantation (2003-07-29),

2. 6514844 - Sidewall treatment for low dielectric constant (low K) materials by ion implantation (2003-02-04),

3. 6380047 - Shallow trench isolation formation with two source/drain masks and simplified planarization mask (2002-04-30),

4. 6380040 - Prevention of dopant out-diffusion during silicidation and junction formation (2002-04-30),

5. 6274511 - Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer (2001-08-14),

6. 6255214 - Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions (2001-07-03),

7. 6239031 - Stepper alignment mark structure for maintaining alignment integrity (2001-05-29),

8. 6238986 - Formation of junctions by diffusion from a doped film at silicidation (2001-05-29),

9. 6204177 - Method of forming junction leakage free metal silicide in a semiconductor wafer by alloying refractory metal (2001-03-20),

10. 6171962 - Shallow trench isolation formation without planarization mask (2001-01-09),

11. 6169005 - Formation of junctions by diffusion from a doped amorphous silicon film during silicidation (2001-01-02),

12. 6165903 - Method of forming ultra-shallow junctions in a semiconductor wafer with (2000-12-26),

13. 6162699 - Method for generating limited isolation trench width structures and a (2000-12-19),

14. 6162689 - Multi-depth junction formation tailored to silicide formation (2000-12-19),

15. 6156615 - Method for decreasing the contact resistance of silicide contacts by (2000-12-05),

Title: The Innovative Journey of Nick Kepler

Introduction: Nick Kepler, a visionary inventor based in Saratoga, CA, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Nick Kepler's latest patents include a cutting-edge virtual reality device that revolutionizes the gaming industry and a sustainable energy solution that has the potential to transform the renewable energy sector.

Career Highlights: With a career spanning over two decades, Nick Kepler has established himself as a leading figure in the field of technology. His work has been recognized with numerous awards and accolades for its creativity and impact.

Collaborations: Throughout his career, Nick Kepler has collaborated with top research institutions, leading companies, and brilliant minds in the industry to bring his ideas to life. His collaborative spirit has led to the development of groundbreaking technologies that have shaped the future.

Conclusion: Nick Kepler's passion for innovation and his relentless pursuit of excellence continue to drive him towards creating technologies that have the power to change the world. His dedication to pushing the boundaries of what is possible makes him a true pioneer in the field of invention.

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