The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2000
Filed:
Sep. 30, 1998
Nick Kepler, Saratoga, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device and method of forming contacts for the semiconductor device performs a retrograde implant of dopant in the source/drain regions so that the concentration of the dopant within these regions is highest at a predetermined depth below the top surface of the substrate. This depth is made to coincide with the bottom surfaces of the silicide contacts at the source/drain regions. Since the bottom of the silicide contacts are located at the region of greatest doping concentration within the source/drain junctions, the contact resistance is maintained relatively low while the sheet resistance may be made lower by increasing the thickness of the silicide contacts.