The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Nov. 05, 1998
Applicant:
Inventors:
Nick Kepler, Saratoga, CA (US);
Olov Karlsson, San Jose, CA (US);
Larry Wang, San Jose, CA (US);
Basab Bandyopadhyay, Austin, TX (US);
Effiong Ibok, Sunnyvale, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
An insulated trench isolation structure is formed by ion implanting impurities proximate to the trench edges for enhancing the oxidation rate and, hence, increasing the thickness of the oxide at the trench edges. Embodiments include ion implanting impurities prior to growing an oxide liner. The resulting thick oxide on the trench edges avoids overlap of a subsequently deposited polysilicon layer and breakdown problems attendant upon a thinned gate oxide at the trench edges.