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For the Inventor, By the Inventor

Austin, TX, United States of America

Basab Bandyopadhyay

USPTO Granted Patents = 56

Average Co-Inventor Count = 5.6

ph-index = 17

Forward Citations = 1,106(Granted Patents)

Forward Citations (Not Self Cited) = 1,090(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal56 out of 12,867 
 
Advanced Micro Devices Corporation
 patents

Years Active: 1997-2004

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56 patents (USPTO):Explore Patents
1. 6720227 - Method of forming source/drain regions in a semiconductor device (2004-04-13),
2. 6599810 - Shallow trench isolation formation with ion implantation (2003-07-29),
3. 6380047 - Shallow trench isolation formation with two source/drain masks and simplified planarization mask (2002-04-30),
4. 6376330 - Dielectric having an air gap formed between closely spaced interconnect lines (2002-04-23),
5. 6353253 - Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization (2002-03-05),
6. 6326298 - Substantially planar semiconductor topography using dielectrics and chemical mechanical polish (2001-12-04),
7. 6309947 - Method of manufacturing a semiconductor device with improved isolation region to active region topography (2001-10-30),
8. 6208015 - Interlevel dielectric with air gaps to lessen capacitive coupling (2001-03-27),
9. 6171962 - Shallow trench isolation formation without planarization mask (2001-01-09),
10. 6165906 - Semiconductor topography employing a shallow trench isolation structure (2000-12-26),
11. 6162699 - Method for generating limited isolation trench width structures and a (2000-12-19),
12. 6153833 - Integrated circuit having interconnect lines separated by a dielectric (2000-11-28),
13. 6150721 - Integrated circuit which uses a damascene process for producing (2000-11-21),
14. 6143624 - Shallow trench isolation formation with spacer-assisted ion implantation (2000-11-07),
15. 6130467 - Shallow trench isolation with spacers for improved gate oxide quality (2000-10-10),

Title: Basab Bandyopadhyay - Pioneering Inventor from Austin, TX

Introduction: Basab Bandyopadhyay is a renowned inventor based in Austin, Texas, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Basab Bandyopadhyay holds several patents in the areas of artificial intelligence, machine learning, and robotics, with his most recent patent focusing on a revolutionary method for enhancing data security in cloud computing.

Career Highlights: With a career spanning over two decades, Basab Bandyopadhyay has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Basab Bandyopadhyay has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to groundbreaking discoveries in the tech industry.

Conclusion: Basab Bandyopadhyay's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to dream big and think outside the box.

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