Basab Bandyopadhyay

This inventor holds 56 USPTO granted patents, primarily in Semiconductor Technology (CPC class 4386). Top assignee: Advanced Micro Devices Corporation. Active years: 1997-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Basab Bandyopadhyay. Retrieved from https://idiyas.com/inventor/basab-bandyopadhyay

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56

% Patents Active = 98.2

Average Co-Inventor Count = 5.6

ph-index = 17

Forward Citations = 1,108(Granted Patents)

Forward Citations (Not Self Cited) = 1,090(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

56 out of 13,175

Advanced Micro Devices Corporation

patents

Years Active: 1997-2004

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Areas of Expertise:

Shallow Trench Isolation

Dielectric Structures

Integrated Circuits

Planarization

Capacitive Coupling

Air Gaps

Dissolvable Dielectric

Conductors

Multilevel Interconnect

Chemical Mechanical Polish

Isolation Regions

Mask Generation

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6720227 - Method of forming source/drain regions in a semiconductor device (2004-04-13),

2. 6599810 - Shallow trench isolation formation with ion implantation (2003-07-29),

3. 6380047 - Shallow trench isolation formation with two source/drain masks and simplified planarization mask (2002-04-30),

4. 6376330 - Dielectric having an air gap formed between closely spaced interconnect lines (2002-04-23),

5. 6353253 - Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization (2002-03-05),

6. 6326298 - Substantially planar semiconductor topography using dielectrics and chemical mechanical polish (2001-12-04),

7. 6309947 - Method of manufacturing a semiconductor device with improved isolation region to active region topography (2001-10-30),

8. 6208015 - Interlevel dielectric with air gaps to lessen capacitive coupling (2001-03-27),

9. 6171962 - Shallow trench isolation formation without planarization mask (2001-01-09),

10. 6165906 - Semiconductor topography employing a shallow trench isolation structure (2000-12-26),

11. 6162699 - Method for generating limited isolation trench width structures and a (2000-12-19),

12. 6153833 - Integrated circuit having interconnect lines separated by a dielectric (2000-11-28),

13. 6150721 - Integrated circuit which uses a damascene process for producing (2000-11-21),

14. 6143624 - Shallow trench isolation formation with spacer-assisted ion implantation (2000-11-07),

15. 6130467 - Shallow trench isolation with spacers for improved gate oxide quality (2000-10-10),

Title: Basab Bandyopadhyay - Pioneering Inventor from Austin, TX

Introduction: Basab Bandyopadhyay is a renowned inventor based in Austin, Texas, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Basab Bandyopadhyay holds several patents in the areas of artificial intelligence, machine learning, and robotics, with his most recent patent focusing on a revolutionary method for enhancing data security in cloud computing.

Career Highlights: With a career spanning over two decades, Basab Bandyopadhyay has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Basab Bandyopadhyay has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to groundbreaking discoveries in the tech industry.

Conclusion: Basab Bandyopadhyay's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to dream big and think outside the box.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]