The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Jan. 29, 2002
Daniel Kadosh, Austin, TX (US);
Jon D. Cheek, Round Rock, TX (US);
James F. Buller, Austin, TX (US);
Basab Bandyopadhyay, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming source/drain regions in a semiconductor device is provided. In one illustrative embodiment, the method comprises forming a gate electrode above a semiconducting substrate, forming source/drain regions in the substrate adjacent the gate electrode by performing at least the following steps: performing two ion implantation processes to form source/drain extensions for the device and performing a third ion implantation process to further form source/drain regions for the device. Various N-type and P-type dopant atoms such as arsenic, phosphorous, boron and boron difluoride may be used with the present invention.