The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Jan. 26, 1999
Applicant:
Inventors:
Basab Bandyopadhyay, Austin, TX (US);
Douglas J Bonser, Austin, TX (US);
Michael J McBride, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438700 ; 438248 ; 438424 ; 438431 ;
Abstract
A method of forming an improved isolation trench between active regions within the semiconductor substrate involves oxidizing unmasked portions of a semiconductor substrate prior to etching an isolation trench into the semiconductor substrate. By oxidizing the unmasked portions of the semiconductor prior to etching, an isolation trench with rounded corners may be formed.