This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2003
Title: Srikantewara Dakshina-Murthy: Innovator in Low Dielectric Constant Materials
Introduction
Srikantewara Dakshina-Murthy is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the treatment of low dielectric constant materials. His innovative approach has implications for the advancement of electronic devices.
Latest Patents
Srikantewara holds 1 patent for his invention titled "Sidewall treatment for low dielectric constant (low K) materials by ion implantation." This method involves forming a first conductive structure and a first dielectric layer above it. The process also includes densifying a portion of the dielectric layer and creating an opening in the densified area, which enhances the performance of electronic components.
Career Highlights
He is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work focuses on improving the efficiency and effectiveness of materials used in electronic devices, contributing to the ongoing evolution of technology.
Collaborations
Srikantewara has collaborated with talented coworkers such as Jeremy Isaac Martin and Eric M Apelgren. Their combined expertise fosters an environment of innovation and creativity within their projects.
Conclusion
Srikantewara Dakshina-Murthy's contributions to the field of low dielectric constant materials exemplify the importance of innovation in technology. His work continues to influence advancements in semiconductor applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile