The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Feb. 10, 2000
Jeremy I. Martin, Austin, TX (US);
Nicholas J. Kepler, Saratoga, CA (US);
Larry L. Zhao, Austin, TX (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A test circuit includes a wafer, an insulative layer formed on the wafer, and a plurality of test structures formed in the insulative layer. Each of the test structures comprises a first comb having a first plurality of fingers and a second comb having a second plurality of fingers. The first and second pluralities of fingers are interleaved to define a finger spacing between the first and second pluralities of fingers. The finger spacing in a first one of the test structures being different than the finger spacing in a second one of the test structures. A method for characterizing damage in a semiconductor device includes providing a wafer having an insulative layer and a plurality of test structures formed in the insulative layer. The test structures have different geometries. An electrical characteristic of first and second test structures of the plurality of test structures is determined. The electrical characteristics of the first and second test structures is compared. Damage to the insulative layer is characterized based on the comparison.