The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
Mar. 15, 2002
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The electromigration resistance of Cu lines is significantly improved by depositing a low-k capping layer thereon, e.g., a silicon carbide capping layer having a dielectric constant of about 4.5 to about 5.5. Embodiments include sequentially treating the exposed planarized surface of inlaid Cu with a plasma containing NH diluted with N , discontinuing the plasma and flow of NH and N , pumping out the chamber; introducing trimethylsilane, NH and He, initiating PECVD to deposit the silicon carbide capping layer, as at a thickness of about 200 Å to about 800 Å. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.