Jean-Pierre Faurie

This inventor holds 20 USPTO granted patents and 2 published patent applications, plus 1 CIPO patent and 5 EPO patents, primarily in Semiconductor Materials. Top assignees: Saint-Gobain Cristaux Et Detecteurs, Lumilog, Saint-Gobain Lumilog. Active years: 2006-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jean-Pierre Faurie. Retrieved from https://idiyas.com/inventor/jean-pierre-faurie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 20 (Patent Applications = 2)

% Patents Active = 90.0

CIPO Patents = 1

EPO Patents = 5 (Patent Applications = 15)

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 86(Granted Patents)

Company Filing History:

10 out of 33

Saint-Gobain Cristaux Et Detecteurs

Saint-Gobain Cristaux & Détecteurs

patents

6. 1 out of 1

Saint-Gobain Cristaux Et Dectecteurs

patent

Years Active: 2006-2024

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Areas of Expertise:

Gallium Nitride

Epitaxial Growth

Semiconductor Substrate

Crystalline Orientation

Defect Density

Group III-V

Nitride Films

Wafer Manufacturing

Low Dislocation Density

Thin Buffer Layer

Vapor-Phase Epitaxy

Free-Standing Wafer

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11990335 - N-CO-doped semiconductor substrate (2024-05-21),

2. 10497833 - Semiconductor material including different crystalline orientation zones and related production process (2019-12-03),

3. 10181399 - Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride (2019-01-15),

4. 10043662 - Method of forming semiconductor substrate (2018-08-07),

5. 9882087 - Semiconductor material including different crystalline orientation zones and related production process (2018-01-30),

6. 9318314 - Method of forming a freestanding semiconductor wafer (2016-04-19),

7. 9312129 - Group III-V substrate material with particular crystallographic features and methods of making (2016-04-12),

8. 9209018 - Semiconductor substrate and method of manufacturing (2015-12-08),

9. 9130120 - Group III-V substrate material with thin buffer layer and methods of making (2015-09-08),

10. 9064685 - Semiconductor substrate and method of forming (2015-06-23),

11. 9012306 - Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof (2015-04-21),

12. 8921210 - Semiconductor substrate and method of forming (2014-12-30),

13. 8916456 - Group III-V substrate material with particular crystallographic features (2014-12-23),

14. 8557042 - Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate (2013-10-15),

15. 8283239 - Process for growth of low dislocation density GaN (2012-10-09),

Title: Jean-Pierre Faurie: Innovator in Semiconductor Technology

Introduction

Jean-Pierre Faurie is an accomplished inventor based in Valbonne, France, with a remarkable portfolio of 20 patents. His work primarily focuses on advancements in semiconductor materials, particularly in the field of group 13 nitride compounds. Faurie's contributions to this area have significantly impacted the industry through innovative processes and technologies.

Latest Patents

Among his latest inventions are the "N-CO-doped semiconductor substrate" and a unique process for fabricating a single-crystal semiconductor material of group 13 nitride, specifically gallium nitride (GaN). Additionally, he has developed a manufacturing process for semiconductor material of element III nitride that incorporates different crystalline orientation zones to improve production efficiency and material quality.

Career Highlights

Faurie has worked with several prominent companies throughout his career, including Saint-Gobain Cristaux et Détecteurs and Lumilog. These experiences have allowed him to refine his skills and contribute to his field significantly. His extensive knowledge in semiconductor manufacturing has positioned him as a leading figure in the industry.

Collaborations

Throughout his career, Jean-Pierre Faurie has collaborated with notable coworkers, including Bernard Beaumont and Pierre Gibart. Their combined expertise has played a crucial role in advancing the technologies related to semiconductor materials, fostering an environment of innovation and discovery.

Conclusion

In summary, Jean-Pierre Faurie's contributions to the semiconductor industry make him a notable inventor in the field. His latest patents demonstrate his commitment to advancing technology and enhancing manufacturing processes. As he continues to innovate, his work will undoubtedly inspire future advancements in semiconductor technology.

Profile summary based on public USPTO records.