The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Dec. 18, 2019
Applicant:

Ivworks Co., Ltd., Daejeon, KR;

Inventors:

Bernard Beaumont, Le Tignet, FR;

Jean-Pierre Faurie, Valbonne, FR;

Vincent Gelly, Valbonne, FR;

Nabil Nahas, Mougins, FR;

Florian Tendille, Mougins, FR;

Assignee:

IVWORKS CO., LTD., Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 31/0256 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); C30B 25/02 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 29/2003 (2013.01);
Abstract

A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of:


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