Bernard Beaumont

This inventor holds 25 USPTO granted patents and 3 published patent applications, plus 1 CIPO patent and 7 EPO patents, primarily in Semiconductor Materials. Top assignees: Saint-Gobain Cristaux Et Detecteurs, Lumilog, Saint-Gobain Lumilog. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bernard Beaumont. Retrieved from https://idiyas.com/inventor/bernard-beaumont

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 (Patent Applications = 3)

% Patents Active = 92.0

CIPO Patents = 1

EPO Patents = 7 (Patent Applications = 18)

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 273(Granted Patents)

Location History:

Valbonne, FR (2001 - 2009)
Le Tignet, FR (2009 - 2024)

Company Filing History:

10 out of 33

Saint-Gobain Cristaux Et Detecteurs

Saint-Gobain Cristaux & Détecteurs

patents

6. 1 out of 1

Saint-Gobain Cristaux Et Dectecteurs

patent

7. 1 out of 834,570

Other

patents

Years Active: 2001-2025

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Areas of Expertise:

Semiconductor Substrate

Gallium Nitride

Epitaxial Growth

Crystalline Orientation

Low Defect Density

Nitride Interface Layer

Group III-V Materials

Wafer Manufacturing

Nitride Films

Buffer Layer

Vapor-Phase Epitaxy

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12506003 - Semiconductor substrate with nitride interface layer (2025-12-23),

2. 11990335 - N-CO-doped semiconductor substrate (2024-05-21),

3. 10604864 - Method for the production of wafers of nitride of element 13, having a non-zero truncation angle (2020-03-31),

4. 10497833 - Semiconductor material including different crystalline orientation zones and related production process (2019-12-03),

5. 10181399 - Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride (2019-01-15),

6. 10043662 - Method of forming semiconductor substrate (2018-08-07),

7. 9882087 - Semiconductor material including different crystalline orientation zones and related production process (2018-01-30),

8. 9318314 - Method of forming a freestanding semiconductor wafer (2016-04-19),

9. 9312129 - Group III-V substrate material with particular crystallographic features and methods of making (2016-04-12),

10. 9209018 - Semiconductor substrate and method of manufacturing (2015-12-08),

11. 9130120 - Group III-V substrate material with thin buffer layer and methods of making (2015-09-08),

12. 9064685 - Semiconductor substrate and method of forming (2015-06-23),

13. 9012306 - Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof (2015-04-21),

14. 8921210 - Semiconductor substrate and method of forming (2014-12-30),

15. 8916456 - Group III-V substrate material with particular crystallographic features (2014-12-23),

Title: Bernard Beaumont: A Master of Semiconductor Innovations

Introduction

Bernard Beaumont, a distinguished inventor residing in Le Tignet, France, has made significant contributions to the field of semiconductors. With an impressive portfolio of 24 patents, Beaumont has established himself as a key player in innovation within the technology sector. His groundbreaking work primarily revolves around the fabrication of semiconductor materials, particularly group 13 nitrides.

Latest Patents

Bernard Beaumont's latest patented inventions showcase his expertise and forward-thinking approach. Notable among them is the "N-CO-doped semiconductor substrate," which introduces a process for fabricating a single-crystal semiconductor material from group 13 nitride, specifically Gallium Nitride (GaN). This patent highlights the innovative steps involved in producing high-quality nitride wafers, focusing on achieving a non-zero truncation angle. The method involves cutting self-supported crystals along specific transverse planes, resulting in wafers that boast enhanced structural characteristics. These advancements are crucial for various applications in electronics and photonics.

Career Highlights

Throughout his career, Beaumont has worked with prominent companies in the semiconductor industry, including Saint-Gobain Cristaux et Détecteurs and Lumilog. His experience in these organizations allowed him to develop and refine his inventions, paving the way for significant technological advancements. Beaumont's work is a testament to his commitment to innovation and the continual improvement of semiconductor technologies.

Collaborations

Collaboration has been an integral part of Beaumont's success. He has teamed up with notable colleagues, including Jean-Pierre Faurie and Pierre Gibart. Together, they have explored new frontiers in semiconductor research and development, further enhancing the impact of Beaumont's inventions on the industry.

Conclusion

In conclusion, Bernard Beaumont stands out as a titan of innovation in the semiconductor field. His 24 patents, particularly in the realm of group 13 nitride materials, demonstrate his exceptional talent and dedication to advancing technology. As semiconductor applications continue to evolve, Beaumont's contributions will undoubtedly play a vital role in shaping the future of this industry.

Profile summary based on public USPTO records.