The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 06, 2021
Ivworks Co., Ltd., Daejeon, KR;
Florian Tendille, Mougins, FR;
Idris Amirouche, Vallauris, FR;
Hyonju Chauveau, Vallauris, FR;
Bernard Beaumont, Le Tignet, FR;
IVWORKS CO., LTD., Daejeon, KR;
Abstract
Disclosed is a method for manufacturing a monocrystalline semiconductor material of the nitride of a group 13 element, comprising a step of depositing at least one separation layer comprising an element M selected among Ge, Zr, Y, Si, Se, Sc, Mg, In, W, La, Ti, Ta and Hf, by epitaxial growth on a starting substrate; characterised in that an interface layer of formula MAlONis deposited between the starting substrate and the separation layer, wherein: —the atomic indices x and z are greater than 0 and less than or equal to 1; and, —the atomic indices v and y are between 0 and 1; and—the sum y+z is greater than 0.9 and less than or equal to 1.5; and—the sum v+y is greater than or equal to 0.3 and less than or equal to 1.