The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jun. 24, 2011
Bernard Beaumont, Le Tignet, FR;
Jean-pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Jean-Pierre Faurie, Valbonne, FR;
Saint-Gobain Cristaux et Detecteurs, Courbevoie, FR;
Abstract
The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support () comprising a growth face (), the method comprising the steps of formation of a sacrificial bed () on the support (), formation of pillars () on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, growth of a nitride crystal layer () on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes () formed between the pillars, and removing the nitride crystal layer from the support.