The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 29, 2013
Applicants:
Jean-pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Inventors:
Jean-Pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Assignee:
SAINT-GOBAIN CRISTAUX ET DECTECTEURS, Courbevoie, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02016 (2013.01); H01L 21/0242 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02609 (2013.01); H01L 21/02617 (2013.01); H01L 21/02664 (2013.01);
Abstract
A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.