The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

Dec. 27, 2013
Applicant:

Saint-gobain Cristaux ET Detecteurs, Courbevoie, FR;

Inventors:

Jean-Pierre Faurie, Valbonne, FR;

Bernard Beaumont, Le Tignet, FR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01S 5/30 (2006.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02609 (2013.01); H01L 33/12 (2013.01); H01S 5/3013 (2013.01); H01L 33/0075 (2013.01); Y10T 428/26 (2015.01);
Abstract

A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cmat a wavelength within a range of between about 400 nm to about 550 nm.


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