The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Sep. 04, 2013
Applicants:
Jean-pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Inventors:
Jean-Pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Assignee:
SAINT-GOBAIN CRISTAUX ET DETECTEURS, Courbevoie, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02389 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01);
Abstract
A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.