The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Nov. 21, 2014
Applicant:
Saint-gobain Cristaux ET Detecteurs, Courbevoie, FR;
Inventors:
Jean-Pierre Faurie, Valbonne, FR;
Bernard Beaumont, Le Tignet, FR;
Assignee:
Saint-Gobain Cristaux Et Detecteurs, Courbevoie, FR;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02005 (2013.01); H01L 21/02389 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02664 (2013.01); H01L 23/14 (2013.01);
Abstract
A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.