The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Dec. 11, 2015
Applicant:
Saint-gobain Lumilog, Courbevoie, FR;
Inventors:
Assignee:
Saint-Gobain Lumilog, , FR;
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 25/04 (2006.01); H01L 21/02 (2006.01); C30B 33/00 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 33/00 (2013.01); H01L 21/02002 (2013.01); H01L 33/32 (2013.01);
Abstract
The invention relates to a method for production of wafers of nitrides of element () () from a self-supported crystal of nitride of element (), extending longitudinally along a main axis orthogonal to a growth face of the crystal and passing through the centre of said growth face, the crystal () having a truncation angle with a non-zero value, remarkable in that the method comprises a phase of cutting the self-supported crystal along the transverse cutting planes of the crystal in order to obtain wafers of nitride of element (), each wafer including a front face having a non-zero truncation angle in the vicinity of the centre of the front face.