The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2012
Filed:
Dec. 15, 2006
Bernard Beaumont, Le Tignet, FR;
Jean-pierre Faurie, Valbonne, FR;
Pierre Gibart, Chateauneuf Grasse, FR;
Therese Gibart, Legal Representative, Chateauneuf Grasse, FR;
Bernard Beaumont, Le Tignet, FR;
Jean-Pierre Faurie, Valbonne, FR;
Pierre Gibart, Chateauneuf Grasse, FR;
Therese Gibart, legal representative, Chateauneuf Grasse, FR;
Saint-Gobain Cristaux & Detecteurs, Courbevoie, FR;
Abstract
High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 10cm.