Therese Gibart, Legal Representative

Title: Therese Gibart: Innovator in GaN Technology

Introduction

Therese Gibart is a prominent legal representative and inventor based in Chateauneuf Grasse, France. She has made significant contributions to the field of semiconductor technology, particularly in the growth of Gallium Nitride (GaN). Her innovative approach has led to advancements that enhance the quality and efficiency of GaN production.

Latest Patents

Therese Gibart holds a patent for a process that enables the growth of low dislocation density GaN. This patent describes a novel modification of the Epitaxial Lateral Overgrowth technology. By tuning the growth parameters, 3D islands or features are created, which are then smoothed through enhanced lateral growth conditions. The process involves a repetition of 3D-2D growth, resulting in the bending of threading dislocations. This innovative method produces thick layers of free-standing GaN with a threading dislocation density below 10 cm.

Career Highlights

Therese Gibart is associated with Saint-Gobain Cristaux & Detecteurs, where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of GaN materials, which are crucial for various electronic applications.

Collaborations

Throughout her career, Therese has collaborated with notable colleagues, including Bernard Beaumont and Jean-Pierre Faurie. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Therese Gibart's contributions to GaN technology exemplify her commitment to innovation in the semiconductor industry. Her patent and collaborative efforts highlight her role as a key figure in advancing this critical field.