Saint-gobain Cristaux Et Detecteurs

Lumilog

Saint-gobain Lumilog

Saint-gobain Cristaux & Détecteurs

Ivworks Co., Ltd.

Saint-gobain Cristaux Et Dectecteurs

Jean-Pierre Faurie

Bernard Beaumont

Pierre Gibart

Eric Frayssinet

Nabil Nahas

Florian Tendille

Eric Aujol

Therese Gibart, Legal Representative

Vincent Gelly

A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of:

N-CO-doped semiconductor substrate

The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising:

Semiconductor material including different crystalline orientation zones and related production process

A method for manufacturing a semi-conducting material including a layer of nitride of a group 13 element comprising active areas for manufacturing electronic components, and inactive areas, the active and inactive areas extending on a front face of the layer of nitride, the method comprising steps consisting of:

Method for manufacturing a wafer of semiconducting material based on a group 13 element nitride

A method of forming a semiconductor substrate including forming a base layer of a Group 13-15 material on a growth substrate during a growth process, forming a mask having mask regions and gap regions overlying the base layer during the growth process, and preferentially removing a portion of the base layer underlying the mask during the growth process.

Method of forming semiconductor substrate

A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.

Method of forming a freestanding semiconductor wafer

A method of forming a semiconductor substrate including providing a base substrate including a semiconductor material, and forming a first semiconductor layer overlying the base substrate having a Group 13-15 material via hydride vapor phase epitaxy (HVPE), the first semiconductor layer having an upper surface having a N-face orientation.

Group III-V substrate material with particular crystallographic features and methods of making

A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling.

Semiconductor substrate and method of manufacturing

A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 &#x3bc;m and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cmat a wavelength within a range of between about 400 nm to about 550 nm.

Group III-V substrate material with thin buffer layer and methods of making

A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.

Semiconductor substrate and method of forming

The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support () comprising a growth face (), the method comprising the steps of formation of a sacrificial bed () on the support (), formation of pillars () on said sacrificial bed, said pillars being made of a material compatible with GaN epitaxial growth, growth of a nitride crystal layer () on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support in holes () formed between the pillars, and removing the nitride crystal layer from the support.

Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof

A substrate including a body comprising a Group III-V material and having an upper surface, the body comprising an offcut angle defined between the upper surface and a crystallographic reference plane, and the body further having an offcut angle variation of not greater than about 0.6 degrees.

Group III-V substrate material with particular crystallographic features

A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.

Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate

High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 10cm.

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Valbonne, France

Jean-Pierre Faurie