Hsinchu, Taiwan

Jaw-Jung Shin

This inventor holds 42 USPTO granted patents, primarily in Lithography Techniques. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2004-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jaw-Jung Shin. Retrieved from https://idiyas.com/inventor/jaw-jung-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.1

ph-index = 12

Forward Citations = 695(Granted Patents)


Company Filing History:


Years Active: 2004-2023

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Areas of Expertise:
Phase Shift Mask
Electron Beam Lithography
Pattern Generator
Lithographic Processes
Critical Dimension Accuracy
Grid Refinement
High-Throughput Exposure
Multiple-Patterning
EUV Power Improvement
Proximity Correction
Dithering Methods
Semiconductor Device Manufacturing
42 patents (USPTO):Explore Patents

Title: Jaw-Jung Shin: Innovator from Hsinchu

Introduction: Jaw-Jung Shin is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jaw-Jung Shin holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Jaw-Jung Shin has worked with leading tech companies and research institutions, playing a pivotal role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Jaw-Jung Shin has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge exchange to drive progress in the field of technology.

Conclusion: Jaw-Jung Shin's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his position as a visionary inventor, shaping the future of technology and inspiring the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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