The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jul. 11, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shih-Chi Wang, Zhubei, TW;
Tsung-Chih Chien, Caotun Township, Nantou County, TW;
Hui-Min Huang, Taoyuan, TW;
Jaw-Jung Shin, Hsinchu, TW;
Shy-Jay Lin, Jhudong Township, Hsinchu County, TW;
Burn Jeng Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A charged particle multi-beam lithography system includes an illumination sub-system that is configured to generate a charged particle beam; and multiple plates with a first aperture through the plates. The plates and the first aperture are configured to form a charged particle doublet. The system further includes a blanker having a second aperture whose footprint is smaller than that of the first aperture. The charged particle doublet is configured to demagnify a portion of the charged particle beam passing through the first aperture, thereby producing a demagnified beamlet. The blanker is configured to receive the demagnified beamlet from the charged particle doublet, and is further configured to conditionally allow the demagnified beamlet to travel along a desired path.