The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jun. 01, 2012
Wen-chuan Wang, Hsinchu, TW;
Shy-jay Lin, Jhudong Township, Hsinchu County, TW;
Jaw-jung Shin, Hsinchu, TW;
Burn Jeng Lin, Hsinchu, TW;
Wen-Chuan Wang, Hsinchu, TW;
Shy-Jay Lin, Jhudong Township, Hsinchu County, TW;
Jaw-Jung Shin, Hsinchu, TW;
Burn Jeng Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning process. The BARC layer is designed such that a top electrical potential of the resist layer is substantially zero during the e-beam patterning process.