Taiwan Semiconductor Manufacturing Comp. Ltd.

Jaw-Jung Shin

Burn Jeng Lin

Shy-Jay Lin

Wen-Chuan Wang

Pei-Yi Liu

Tsai-Sheng Gau

Jan-Wen You

Chen-Hua Douglas Yu

Cheng-Hung Chen

Burn-Jeng Lin

King-Chang Shu

Hung-Jui Kuo

Tien-I Bao

Chun-Chieh Wang

Chih Wei Lu

Hui-Min Huang

Chih-Ming Ke

Ming-Tan Lee

Tsung-Chih Chien

Shih-Chi Wang

Li-Jui Chen

Li-Chun Tien

Anthony Yen

Chun-Kuang Chen

Liang-Gi Yao

Hua-Tai Lin

Tsiao-Chen Wu

Chang-Cheng Hung

Ren-Guey Hsieh

Mi-Chang Chang

Tsai-Sheng Giau

Shy-Jay Shin

Wen Chuan Wang

Yu-Jun Chou

A first photoresist material is formed. The first photoresist material is exposed through a phase shift mask. The first photoresist material is developed to form a first photoresist layer, wherein the first photoresist layer comprises a plurality of first photoresist patterns and a plurality of first openings between the plurality of first photoresist patterns. A first conductive material is formed in the plurality of first openings. A second photoresist layer is formed over the first conductive material, wherein the second photoresist layer comprises at least one second opening. A second conductive material is formed in the at least one second opening. The first photoresist layer and the second photoresist layer are removed, to form a plurality of first conductive patterns and at least one second conductive pattern. A dielectric layer is formed, wherein the at least one second conductive pattern is disposed in the dielectric layer.

Methods of manufacturing semiconductor device using phase shift mask

Methods of manufacturing redistribution circuit structures are disclosed and one of the methods includes the following steps. A seed layer is formed over a die and an encapsulant encapsulating the die. A photoresist material is formed over the seed layer. The photoresist material is exposed through a phase shift mask to an I-line wavelength within an I-line stepper using a numerical aperture equal to or less than 0.18. The photoresist material is developed to form a photoresist layer including photoresist patterns and openings therebetween. A conductive material is formed in the openings. The photoresist patterns are removed to form conductive patterns. By using the conductive patterns as a mask, the seed layer is partially removed, to form seed layer patterns under the conductive patterns, wherein redistribution conductive patterns include the seed layer patterns and the conductive patterns respectively.

Methods of manufacturing redistribution circuit structures using phase shift mask

A charged particle multi-beam lithography system includes an illumination sub-system that is configured to generate a charged particle beam; and multiple plates with a first aperture through the plates. The plates and the first aperture are configured to form a charged particle doublet. The system further includes a blanker having a second aperture whose footprint is smaller than that of the first aperture. The charged particle doublet is configured to demagnify a portion of the charged particle beam passing through the first aperture, thereby producing a demagnified beamlet. The blanker is configured to receive the demagnified beamlet from the charged particle doublet, and is further configured to conditionally allow the demagnified beamlet to travel along a desired path.

Apparatus for charged particle lithography system

The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier.

Systems and methods for high-throughput and small-footprint scanning exposure for lithography

Lithography methods disclosed herein accommodate shrinking pattern dimensions. An exemplary method includes receiving a pattern to be transferred to a workpiece by a pattern generator. The pattern generator is divided into a first segment set and a second segment set based on the pattern, such that a collective exposure dose from the first segment set and the second segment set satisfies an exposure dose specified by the pattern. The first segment set is offset from the second segment set in a first direction, and segments in the first segment set and segments in the second segment set are offset from each other in a second direction different than the first direction. The method further includes exposing the workpiece according to the first segment set and the second segment set.

Grid refinement method

The present disclosure relates to an extreme ultraviolet (EUV) radiation source that generates charged tin droplets having a trajectory controlled by an electromagnetic field, and an associated method. In some embodiments, the EUV radiation source has a laser that generates a laser beam. A charged fuel droplet generator provides a plurality of charged fuel droplets having a net electrical charge to an EUV source vessel. An electromagnetic field generator generates an electric field and/or a magnetic field. The net electrical charge of the charged fuel droplets causes the electric or magnetic field to generate a force on the charged fuel droplets that controls a trajectory of the charged fuel droplets to intersect the laser beam. By using the electric or magnetic field to control a trajectory of the charged fuel droplets, the EUV system is able to avoid focus issues between the laser beam and the charged fuel droplets.

Method for EUV power improvement with fuel droplet trajectory stabilization

The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n&#x3c;1. The method includes providing a pattern generator having a first pixel size S1 to generate an alternating data grid having a second pixel size S2 that is &#x3c;S1, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.

An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.

The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n&#x3c;1. The method includes providing a pattern generator having a first pixel size Sto generate an alternating data grid having a second pixel size Sthat is &#x3c;S, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.

A pattern generator includes a mirror array plate having a mirror, at least one electrode plate disposed over the mirror array plate, a lens let disposed over the mirror, and at least one insulator layer sandwiched between the mirror array plate and the electrode plate. The electrode plate includes a first conducting layer and a second conducting layer. The lens let has a non-straight sidewall formed in the electrode plate. The pattern generator further includes at least one insulator sandwiched between two electrode plates. The non-straight sidewall can be a U-shaped sidewall or an L-shaped sidewall.

Pattern generator for a lithography system

A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning process. The BARC layer is designed such that a top electrical potential of the resist layer is substantially zero during the e-beam patterning process.

Methods for electron beam patterning

The present disclosure provides a method for image dithering. The method includes providing a polygon related to an integrated circuit (IC) layout design in a graphic database system (GDS) grid; converting the polygon to an intensity map in the GDS grid, the intensity map including a group of partial pixels and a group of full pixels; performing a first quantization process to a partial pixel to determine a first error; applying the first error to one or more full pixels; performing a second quantization process to a full pixel to determine a second error; and distributing the second error to one or more full pixels. The partial pixels correspond to pixels partially covered by the polygon, and the full pixels correspond to pixels fully covered by the polygon.

Growing community of inventors

Hsinchu, Taiwan

Jaw-Jung Shin