The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Oct. 30, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Wen-Chuan Wang, Hsinchu, TW;
Shy-Jay Lin, Jhudong Township, TW;
Pei-Yi Liu, Changhua, TW;
Jaw-Jung Shin, Hsinchu, TW;
Burn Jeng Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size Sto generate an alternating data grid having a second pixel size Sthat is <S, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.