The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Sep. 11, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shih-Chi Wang, Hsinchu County, TW;
Tsung-Chih Chien, Nantou County, TW;
Hui-Min Huang, Taoyuan County, TW;
Jaw-Jung Shin, Hsinchu, TW;
Shy-Jay Lin, Hsinchu County, TW;
Burn Jeng Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus for use in a charged particle multi-beam lithography system is disclosed. The apparatus includes a plurality of charged particle doublets each having a first aperture and each configured to demagnify a beamlet incident upon the first aperture thereby producing a demagnified beamlet. The apparatus further includes a plurality of charged particle lenses each associated with one of the charged particle doublets, each having a second aperture, and each configured to receive the demagnified beamlet from the associated charged particle doublet and to realize one of two states: a switched-on state, wherein the demagnified beamlet is allowed to travel along a desired path, and a switched-off state, wherein the demagnified beamlet is prevented from traveling along the desired path. In embodiments, the first aperture is greater than the second aperture, thereby improving particle beam efficiency in the charged particle multi-beam lithography system.