Jason Jyh-shyang Jenq

This inventor holds 23 USPTO granted patents, primarily in Dynamic Random Access Memory. Top assignees: United Microelectronics Corp., Other. Active years: 1996-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jason Jyh-shyang Jenq. Retrieved from https://idiyas.com/inventor/jason-jyh-shyang-jenq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 156(Granted Patents)

Location History:

Pingtung City, TW (1999)
Pingtung, TW (1996 - 2000)

Company Filing History:

22 out of 7,294

United Microelectronics Corp.

patents

1 out of 834,659

Other

patents

Years Active: 1996-2000

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Areas of Expertise:

DRAM Cell Capacitance

Capacitor Fabrication

Contact Openings

Wafer Structure

Bit Line Fabrication

Dual Damascene Structure

Planarization

Self-Aligned Silicide

Polysilicon Wires

HSG DRAM Cell

Fin/Cavity Capacitor

Dynamic Memory Manufacturing

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6159788 - Method to increase DRAM cell capacitance (2000-12-12),

2. 6153465 - Method of fabricating a capacitor of dynamic random access memory (2000-11-28),

3. 6121085 - Method of fabricating contact openings for dynamic random-access memory (2000-09-19),

4. 6114231 - Wafer structure for securing bonding pads on integrated circuit chips (2000-09-05),

5. 6107132 - Method of manufacturing a DRAM capacitor (2000-08-22),

6. 6080619 - Method for manufacturing DRAM capacitor (2000-06-27),

7. 6030867 - Method of fabricating a Fin/HSG DRAM cell capacitor (2000-02-29),

8. 6025277 - Method and structure for preventing bonding pad peel back (2000-02-15),

9. 6017788 - Method of fabricating bit line (2000-01-25),

10. 5989997 - Method for forming dual damascene structure (1999-11-23),

11. 5989953 - Method for manufacturing DRAM capacitor (1999-11-23),

12. 5981334 - Method of fabricating DRAM capacitor (1999-11-09),

13. 5981330 - Process for fabricating bitlines (1999-11-09),

14. 5960280 - Method of fabricating a fin/cavity capacitor structure for DRAM cell (1999-09-28),

15. 5937307 - Process for fabricating DRAM capacitor (1999-08-10),

Title: Jason Jyh-shyang Jenq - Innovative Inventor from Pingtung, Taiwan

Introduction: Jason Jyh-shyang Jenq is a highly accomplished inventor hailing from Pingtung, Taiwan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Jason Jyh-shyang Jenq holds several patents in the areas of renewable energy technologies, advanced materials, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Jason Jyh-shyang Jenq has worked with prestigious research institutions and leading technology companies, consistently pushing the boundaries of innovation and creating solutions to complex challenges.

Collaborations: Throughout his career, Jason Jyh-shyang Jenq has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge exchange to drive progress in the industry.

Conclusion: Jason Jyh-shyang Jenq's passion for innovation, coupled with his relentless drive to make a positive impact on society, solidifies his position as a visionary inventor shaping the future of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]