The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
May. 27, 1998
Applicant:
Inventors:
Sun-Chieh Chien, Hsinchu, TW;
King-Lung Wu, Tainan Hsien, TW;
Chuan-Fu Wang, Taipei Hsien, TW;
Jason Jenq, Pingtung, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438255 ; 438254 ;
Abstract
A method for manufacturing a DRAM capacitor is provided to form a lower electrode with a cylindrical profile by using a first stage and a second stage. The stages provide different etching rates in various situations. The invention uses the stages to allow the part of the second polysilicon layer between the capacitors to be completely etched and prevent the other part of the second polysilicon layer serving as a lower electrode from over-etching. The invention provides an easier process of forming a cylindrical capacitor with a larger surface.