The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Apr. 17, 1998
Applicant:
Inventors:
Benjamin Szu-Min Lin, Tung Chui Chiayi, TW;
Jason Jenq, Pingtung, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438622 ; 438624 ; 438631 ; 438633 ; 438634 ; 438637 ; 438638 ; 438640 ; 438675 ; 438692 ; 438701 ; 438703 ; 438761 ; 438713 ; 438948 ; 430311 ; 430312 ; 430314 ; 430316 ; 430317 ;
Abstract
A method for forming dual damascene metallic structure that utilizes the formation of a protective photoresist layer at the bottom of a vertical window to prevent damages to a device region in the substrate when subsequent etching operation is carried out to form a horizontal trench pattern. The protective photoresist layer at the bottom of the vertical window is formed by irradiating the photoresist layer with a dose of radiation having energy level insufficient to chemically dissociate the photoactive molecules of the photoresist layer near the bottom of the vertical window.