The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Mar. 12, 1998
Applicant:
Inventors:
Jason Jenq, Pingtung, TW;
Der-Yuan Wu, Hsinchu, TW;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438398 ; 438255 ;
Abstract
A process of fabricating the storage capacitor of a DRAM memory IC device having increased electrode surface area is disclosed. The hemispherical-grain silicon layer used to effect the area increase does not suffer stripping-off during the process of removal of its native oxide. The prevention of the stripping-off is achieved by the employment of a amorphous silicon layer underlying the hemispherical-grain silicon layer. The amorphous silicon layer improves the adhesiveness of the hemispherical-grain silicon layer, thereby preventing its stripping-off.