The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Dec. 29, 1997
Chia-Wen Liang, Hsinchu Hsien, TW;
Jason Jenq, Pingtung, TW;
Abstract
A method for forming a DRAM capacitor that utilizes silicon nitride spacers on two occasions to perform self-aligned contact window etching operations. Furthermore, on the second etching operation, one less photomask is required for the etching of the second via. In addition, a silicon nitride layer over the first polysilicon layer has a smaller thickness than the usual oxide layer in a conventional method of manufacture. Consequently, a shallower contact step height for the capacitor, which is beneficial to the production of miniaturized devices, is obtained. Finally, the tri-fork shaped capacitor structure further increases the surface area of the capacitor so that the capacitance of the DRAM capacitor is increased.