The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Jan. 20, 1998
Jason Jenq, Pingtung, TW;
Sun-Chieh Chien, Hsinchu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of fabricating a capacitor of a dynamic random access memory is provided. A substrate is first provided, wherein a first dielectric layer is formed on the substrate, and a via is formed through the first dielectric layer to expose one of source/drain regions. A conductive material is formed on the first dielectric layer so that the conductive material is filled in the via to contact with the one of the source/drain regions. The conductive material is patterned to form a first conductive layer. A hemispherical polysilicon grain layer is formed at least on the first conductive layer. The hemispherical polysilicon grain layer is etched back so that the first conductive layer and the hemispherical polysilicon grain layer together form a lower electrode. A second dielectric layer is formed on the lower electrode. A second conductive layer is formed on the second dielectric layer to be an upper electrode.