Allen, TX, United States of America

Jaroslav Hynecek

USPTO Granted Patents = 158 

 

Average Co-Inventor Count = 1.2

ph-index = 23

Forward Citations = 1,858(Granted Patents)


Inventors with similar research interests:


Location History:

  • Dallas, TX (US) (1979 - 1999)
  • Richardson, TX (US) (1980 - 2006)
  • Lake Oswego, OR (US) (2011 - 2018)
  • Allen, TX (US) (2003 - 2021)

Company Filing History:


Years Active: 1979-2021

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Areas of Expertise:
Image Sensors
Global Shutter
Backside Illuminated
High Dynamic Range
Single-Photon Avalanche Diode
Cmos Technology
Charge Transfer
Photon Counting
Tri-Level Biased Transfer Gates
Pixel Architecture
Jfet Source Follower
Burst Reset Operation
158 patents (USPTO):Explore Patents

Title: Jaroslav Hynecek: A Pioneer in Image Sensor Innovations

Introduction:

Jaroslav Hynecek, an acclaimed inventor and engineer based in Allen, Texas, has made significant contributions to the field of image sensor technology. With a remarkable portfolio of 158 patents, his expertise lies in developing cutting-edge image sensors capable of simultaneous integration of electrons and holes. This article delves into Hynecek's latest patents, career highlights, notable collaborations, and his overall impact on the field.

Latest Patents:

Hynecek's recent patents showcase his innovation in image sensor technology. One of his latest inventions is the "Stacked Image Sensor Capable of Simultaneous Integration of Electrons and Holes." This patent describes a backside-illuminated hybrid bonded stacked chip image sensor with a pixel circuit array featuring a charge storage capacitor oriented in a vertical direction. The sensor enables the integration of both electrons and holes using a global shutter operation, utilizing the charge storage capacitor for storing signals generated by the holes.

Another notable invention is the "Single-Photon Avalanche Diode Image Sensor with Photon Counting and Time-of-Flight Detection Capabilities." This patent outlines an image sensor implemented using two-layer stacking and the single-photon avalanche diode (SPAD) concept in a Geiger mode of operation for single-photon detection. The sensor allows for photon counting and time-of-flight (ToF) detection within the same array, enabling applications in both light-level signal acquisition and 3-dimensional imaging.

Career Highlights:

Throughout his extensive career, Hynecek has made substantial contributions to several renowned companies. He has worked with Texas Instruments Corporation, a global leader in semiconductor manufacturing, and made significant advancements in image sensor technologies during his tenure. Additionally, he has contributed his expertise to Semiconductor Components Industries, LLC (better known as ON Semiconductor), a cutting-edge semiconductor supplier.

Collaborations:

Hynecek's work has often involved collaboration with esteemed colleagues in the industry. Notably, he has collaborated with Hirofumi Komori, an accomplished engineer known for his expertise in optical systems. Together, they have combined their knowledge and skills to push the boundaries of image sensor technologies. Leonard Forbes, another notable collaborator, has contributed to the development of image sensor designs alongside Hynecek.

Conclusion:

Jaroslav Hynecek's pioneering work in image sensor technology has revolutionized the field, earning him international recognition and a vast number of patents. With his ability to integrate both electrons and holes, his image sensors demonstrate enhanced capabilities for various applications. His career highlights in prestigious companies such as Texas Instruments Corporation and Semiconductor Components Industries, LLC further underscore his contributions to the industry. Through collaborations with esteemed colleagues like Hirofumi Komori and Leonard Forbes, Hynecek has consistently demonstrated his commitment to driving innovation in image sensor technologies.

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