High dynamic range and global shutter image sensor pixels having charge overflow signal detecting structures

Abstract

An image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, and a charge overflow circuit. The charge storage region may be used to operate the image sensor array in global shutter mode. During high light level illumination, the charge overflow circuit may divert charge away from the photodiode such that only a predetermined portion of the accumulated charge remains in the photodiode. During low light level illumination all of the accumulated charge may be stored in the pixel photodiode. The charge overflow circuit may include a transistor and a resistor or capacitor. By implementing a charge overflow circuit, the size of the charge storage region may be reduced while still preserving the high dynamic range and low noise of the image sensor during all light illumination conditions.