The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Sep. 19, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Jaroslav Hynecek, Allen, TX (US);
Vladimir Korobov, San Mateo, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
Electronic devices may include High Dynamic Range (HDR) complementary metal-oxide-semiconductor (CMOS) image sensor arrays that are illuminated from the back side of the substrate and operate in a rolling shutter (RS) scanning mode. An image sensor may include stacked chips to improve image sensor performance. For example, by stacking photodiodes on top of each other and using dichroic dielectric layers in chip-to-chip isolation, sensor sensitivity may be increased, Moiré effect may be reduced, and the overall image sensor performance may be improved. Image sensors may include a charge sensing and charge storing scheme where charge generated by low incident light levels is transferred onto a charge sensing node of an in-pixel inverting feedback amplifier and charge generated by high incident light levels overflows a certain potential barrier built in the pixel, is stored on capacitors, and is sensed by a source follower.