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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10957724 B1

PDFFull Text
Date of Patent:
Mar. 23, 2021

Filed:

Apr. 18, 2019

Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities

Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Jaroslav Hynecek, Allen, TX (US);

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);

Attorneys:

Treyz Law Group, P.C.

Joseph F. Guihan

Primary Examiner:

Thanh Luu

Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 27/32 (2006.01); G01S 17/10 (2020.01); G01S 7/481 (2006.01); G01S 7/4863 (2020.01); G01S 7/4865 (2020.01); G01S 17/86 (2020.01); H01L 29/08 (2006.01); G01J 1/44 (2006.01); H03K 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/146 (2013.01); G01S 7/4813 (2013.01); G01S 7/4816 (2013.01); G01S 7/4863 (2013.01); G01S 7/4865 (2013.01); G01S 17/10 (2013.01); G01S 17/86 (2020.01); H01L 27/32 (2013.01); H01L 29/08 (2013.01); H01L 31/02027 (2013.01); H01L 31/107 (2013.01); G01J 1/44 (2013.01); G01J 2001/442 (2013.01); H01L 31/02019 (2013.01); H03K 21/00 (2013.01);
Abstract

A back side illuminated image sensor may operate using the single-photon avalanche diode (SPAD) concept in a Geiger mode of operation for single photon detection. The image sensor may be implemented using two layer stacking with a silicon on insulator (SOI) chip. The chip-to-chip electrical connections between the top level image sensing chip and the second level ASIC circuit chip may be realized at each pixel with a single bump connection per pixel. A light level signal may be obtained from pixels that have photon counting capabilities while a distance measurement signal for 3-dimensional imaging may be obtained from pixels that have time-of-flight (ToF) detection capabilities. Both types of pixels may be integrated within the same array and use the same SPAD structure placed on the top chip.

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